CPH5612 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2168
2.9
543
1
0.95
2
0.4
0.4
CPH5612
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=50V, VGS=4V, ID=1A
VDS=50V, VGS=4V, ID=1A
VDS=50V, VGS=4V, ID=1A
IS=1A, VGS=0
Ratings
Unit
min
typ
max
4.4
nC
1.2
nC
0.8
nC
0.82
1.2
V
Electrical Connection
0.15
0.05
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
5
4
3
1
2
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
Top view
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=50V
ID=0.5A
RL=100Ω
D
VOUT
CPH5612
P.G
50Ω
S
ID -- VDS
1.0
0.9
1.5V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
VGS=1.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT08335
3.0
VDS=10V
2.5
ID -- VGS
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
Gate-to-Source Voltage, VGS -- V IT08336
No.8180-2/4