CPH3449 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH3449
⏐yfs⏐ -- ID
10
7
VDS=10V
5
3
25^°C
2
1.0
Ta= ^--25°C ₇₅^°C
7
5
3
2
0.1
0.01
1000
7
5
3
2
23
5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
SW Time -- ID
23 5
IT06106
VDD=15V
VGS=4V
100
7
5
3
td(off)
2
tf
10
7
td(on)
5
tr
3
2
1.0
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
4.0
VDS=10V
3.5 ^ID=1.5A
Drain Current, ID -- A
VGS -- Qg
23
5 7 ₁₀
IT06108
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
Total Gate Charge, Qg -- nC
IT06110
PD -- Ta
1.2
IS -- VSD
10
7
VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT06107
Ciss, Coss, Crss -- VDS
1000
f=1MHz
7
5
3
2
Ciss
100
7
5
3
2
Coss
Crss
10
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT06109
ASO
2
10
7
IDP=6A
PW≤10µs
5
3
2 ID=1.5A
1.0
10m1sm10s0^µs
7
5
3
2
Operation in this
area is limited by
DC
RDS(on).
100ms
operation
0.1
7
5
3 ^Ta=25°C
2 Single pulse
0.01 ^{Mounted on a ceramic board (900mm2✕0.8mm)}
0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
23 5
Drain-to-Source Voltage, VDS -- V IT12978
1.0
0.9
0.8
0.6
0.4
0.2
Mounted _{on a ceramic board (900mm 2✕0.8mm)}
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12979
No. A0953-3/4