CPH3449 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
1
0.95
2
0.4
CPH3449
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=1.5A
VDS=10V, VGS=4V, ID=1.5A
VDS=10V, VGS=4V, ID=1.5A
IS=1.5A, VGS=0V
Ratings
Unit
min
typ
max
9
ns
20
ns
23
ns
29
ns
2.2
nC
0.52
nC
0.52
nC
0.9
1.2
V
Switching Time Test Circuit
0.15
0.05
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=800mA
RL=18.75Ω
D
VOUT
CPH3449
P.G
50Ω
S
ID -- VDS
1.6
1.4
1.2
1.5V
1.0
0.8
0.6
0.4
0.2
VGS=1.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06102
RDS(on) -- VGS
500
Ta=25°C
450
400
350
300
800mA
250 _ID=400mA
200
150
100
50
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT06104
ID -- VGS
2.0
VDS=10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V IT06103
RDS(on) -- Ta
500
450
400
350
300
250
200
VVGGS=S=2.45VV,,
I _D=400mA
ID=800mA
150
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06105
No. A0953-2/4