CPH3441 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH3441
10
7 ^VDS=10V
5
3
2
1.0
7
5
3
2
yfs -- ID
Ta= ^{--25°C75°C}
25^°C
0.1
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10
Drain Current, ID -- A
IT10173
SW Time -- ID
3
VDD=15V
2
VGS=10V
td(off)
100
7
5
tf
3
2
td(on)
tr
10
7
5
3
0.1
23
5 7 1.0
23
57
10
VDS=10V
Drain Current, ID -- A
VGS -- Qg
IT10306
9 ID=6.5A
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Total Gate Charge, Qg -- nC
IT10307
PD -- Ta
1.4
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
IS -- VSD
VGS=0V
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT10174
Ciss, Coss, Crss -- VDS
f=1MHz
1000
7
5
Ciss
3
2
Coss
100
Crss
7
5
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT10176
ASO
5
3 ^IDP=26A
<10µs
2
10
7
ID=6.5A
5
3
2
1.0
7
5
3 _{Operation in this}
1ms ¹⁰⁰_µs
DC
100ms
operation
10ms
2 _{area is limited by RDS(on).}
0.1
7
5
3 ^Ta=25°C
2 Single pulse
0.01 ^{Mounted on a ceramic board (900mm2!0.8mm)}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5}
Drain-to-Source Voltage, VDS -- V IT10178
1.2
1.0
0.8
0.6
0.4
0.2
Mounted _{on a ceramic board (900mm 2!0.8mm)}
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10146
No. A0093-3/4