CPH3441 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH3441
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=10V, ID=6.5A
VDS=10V, VGS=10V, ID=6.5A
VDS=10V, VGS=10V, ID=6.5A
IS=6.5A, VGS=0V
Ratings
Unit
min
typ
max
19.8
nC
3.6
nC
3.7
nC
0.85
1.2
V
Package Dimensions
unit : mm
7015-004
0.4
0.15
3
0.05
1
2
1.9
2.9
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=3A
RL=5Ω
D
VOUT
CPH3441
P.G
50Ω
S
ID -- VDS
6.5
6.0
5.5
5.0
V GS=3.0V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT10169
RDS(on) -- VGS
80
Ta=25°C
70
ID=1.5A _3.0A
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V IT10171
10
VDS=10V
9
ID -- VGS
8
7
6
5
4
3
2
1
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT10170
RDS(on) -- Ta
70
60
50
40
ID=1.5A, ^VGS=4V
30
20
ID=3.0A, ^VGS=10V
10
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10253
No. A0093-2/4