CPH3303 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

CPH3303
R _DS(on) - Ta
600
500
400
ID^{=–0.2A,VGS=–2.5V}
300
ID^{=–0.8A,VGS=–4V}
200
100
0
-60 -40 -20 0 20 40 60 80 100 120 140
Ambient Temperature, Ta – ˚C
7
5
VGS= 0
3
2
IF - VSD
-1.0
7
5
3
2
-0.1
7
5
3
2
-0.01
7
5
3
2
-0.001
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Diode Forward Voltage, VSD – V
Ciss,Coss,Crss - VDS
1000
f = 1MHz
7
5
3
2
Ciss
-10
VDS=–10V
-9 I_D=–1.6A
-8
-7
-6
VGS - Q g
100
Coss
7
5
Crss
3
2
10
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
Drain-to-Source Voltage, VDS – V
SW Time - ID
100
VDD=–10V
7
VGS=–4V
5
t_d(off)
tf
3
2
tr
td(on)
10
7
5
3
7 -0.1
2
3
5 7 -1.0
Drain Current, ID – A
2
3
-5
-4
-3
-2
-1
0
0
12345678
9 10
Total Gate Charge, Qg – nC
-10
7
IDP=–6.4A
5
3
2
ASO
100µs
ID=–1.6A ^{100ms 10ms 1ms}
-1.0
7
5
3
DC _operation
2
Operation in this area
-0.1
is limited by RDS(on).
7
5
3 _Ta=25°C
2 1 Pulse
Mounted on a ceramic board (900mm²Ã—0.8mm)
-0.01
-0.1 2 3 5 7 -1.0
2 3 5 7 -10
Drain-to-Source Voltage, VDS – V
23
PD - Ta
1.2
1.0
0.8
0.6
0.4
0.2
Mounted _{on a ceramic board (900mm 2×0.8mm)}
00
20
40
60
80
100 120 140 160
Ambient Temperature, Ta – ˚C
No.5988-3/4