CPH3303 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
CPH3303
Symbol
Conditions
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–1.6A
VDS=–10V, VGS=–10V, ID=–1.6A
VDS=–10V, VGS=–10V, ID=–1.6A
IS=–1.6A, VGS=0
Switching Time Test Circuit
VIN
0V
–4V
VIN
PW=10µs
D.C.≤1%
VDD=–10V
ID=–0.8A
RL=12.5Ω
D
VOUT
G
CPH3303
P.G
50Ω
S
Ratings
Unit
min
typ
max
10
ns
25
ns
32
ns
32
ns
9.5
nC
1
nC
1.5
nC
–1.0 –1.5 V
ID - VDS
-1.8
–8.0V
-1.6
-1.4
–2.5V
–2.0V
-1.2
-1.0
-0.8
-0.6
-0.4
VGS=–1.5V
-0.2
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Drain-to-Source Voltage, VDS – V
| ^yfs | - I D
10
VDS=–10V
7
5
3
2
Ta=–25^°C75_°C
25^°C
1.0
7
5
3
2
0.1
-0.01
2 3 5 7 _-0.1
2 3 5 7 _-1.0
Drain Current, ID – A
23 5
-3.5
VDS=–10V
-3.0
ID - VGS
-2.5
-2.0
-1.5
-1.0
-0.5
00
1000
900
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Gate-to-Source Voltage, VGS – V
RDS(on) - VGS
Ta=25°C
800
700
600
ID=–0.8A
500
I_D=–0.2A
400
300
200
100
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-to-Source Voltage, VGS – V
No.5988-2/4