BFL4001_12 Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4001
RDS(on) -- VGS
6
ID=3.25A
5
4
Tc=75°C
3
25°C
2
--25°C
1
0
4 5 6 7 8 9 10 11 12 13
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
7
5 ^VDS=20V
14 15
IT15296
3
2
25^°C
1.0
7
Tc= ^--25°C 75^°C
5
3
2
0.1
7
5
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10
Drain Current, ID -- A
IT15298
7
5
VDD=200V
VGS=10V
SW Time -- ID
3
2
td(off)
100
7
5
tf
3
tr
2
td(on)
10
7
0.1
23
10
VDS=200V
9 _ID=6.5A
8
5 7 _1.0
2 3 5 7 ₁₀
Drain Current, ID -- A
VGS -- Qg
23
IT15300
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Total Gate Charge, Qg -- nC
IT15302
RDS(on) -- Tc
7
6
5
4
3
V ^{GS=10V, I D=3.25A}
2
1
0
--50
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
2
1000
7
5
3
2
100
7
5
3
2
--25
0
25
50
75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT15297
VGS=0V
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT15299
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
10
0 5 10 15 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS -- V IT15301
ASO
100
7
5
3
2 IDP=13A (PW≤10μs)
10
7
IDc(*1)=6.5A
5
3
2
IDpack(*2)=4.1A
1.0
7
5
3
2
Operation in
DC _{op1e0r0a1tmi0omsn1sms} ^{100μ10sμs}
this area is
0.1
7
limited by RDS(on).
5
3 _Tc=25°C
2 _{Single pulse}
0.01
*1. Shows chip capability
*2. SANYO's ideal heat dissipation condition
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7100 2 3 5 71000}
Drain-to-Source Voltage, VDS -- V IT16791
No.A1638-3/5