BFL4001_12 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1638A
BFL4001
SANYO Semiconductors
DATA SHEET
BFL4001
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance}
• _{Avalanche resistance guarantee}
• _{High-speed switching}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
6.5
A
4.1
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
13
A
Allowable Power Dissipation
PD
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
2.0
W
37
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
223 mJ
Avalanche Current *5
IAV
6.5
A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6.5A
*5 L≤10mH, single pulse
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
FL4001
2.76
LOT No.
1
3
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
http://semicon.sanyo.com/en/network
22912 TKIM TC-00002729/31010QB TK IM TC-00002256 No.A1638-1/5