ATP218 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP218
RDS(on) -- VGS
6.0
5.5
5.0 ^ID=25A
50A
4.5
Tc=25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT16420
1000
| yfs | -- ID
7
VDS=10V
5
3
2
25^°C
100
7
5
3
Tc=
--25^°C
75^°C
2
10
7
5
3
2
1.0
0.1
10000
7
5
3
2
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Drain Current, ID -- A
SW Time -- ID
IT16422
VDD=15V
VGS=4.5V
1000
7
5
3
2
100
7
5
3
2
td(off)
tf
tr
td(on)
10
7
5
3
2
1.0
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7100}
Drain Current, ID -- A
5
VDS=15V
VGS -- Qg
ID=100A
2 3 5 71000
IT16424
4
3
2
1
0
0
10
20
30
40
50
60
70
Total Gate Charge, Qg -- nC
IT16426
RDS(on) -- Tc
8
7
6
5
4
3
V GVSG=S2=.54V.5,VI ^D, _I=D2=5A50A
2
1
0
--60
100075
3
2
10075
3
2
1075
3
2
1.075
3
2
0.1
75
3
2
0.01
75
3
2
0.001
0
100000
7
5
--40 --20
0 20 40 60 80 100
Case Temperature, Tc -- °C
IS -- VSD
120 140 160
IT16421
VGS=0V
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT16423
Ciss, Coss, Crss -- VDS
f=1MHz
3
2
10000
7
5
3
2
Ciss
1000
7
5
3
2
Coss
Crss
100
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
ASO
1000
7
5
3
IDP=300A (PW≤10μs)
2
100 ^ID=100A
7
5
3
2
1001m0ms1sms ^{100μs10μs}
IT16425
10
Operation in
7
5
this area is
3 limited by RDS(on).
2
1.0
7
5
3
2
Tc=25°C
0.1 ^{Single pulse}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Drain-to-Source Voltage, VDS -- V
5 7 ₁₀₀
IT16427
No.8970-3/4