ATP218 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Electrical Characteristics at Ta=25°C
ATP218
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=4.5V
ID=25A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=15V, VGS=4.5V, ID=100A
VDS=15V, VGS=4.5V, ID=100A
VDS=15V, VGS=4.5V, ID=100A
IS=100A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=50A
RL=0.3Ω
D
VOUT
ATP218
P.G
50Ω
S
Ratings
Unit
min
typ
max
30
V
1
μA
±10
μA
0.5
1.3
V
260
S
2.9
3.8 mΩ
4.0
5.6 mΩ
6600
pF
780
pF
600
pF
88
ns
960
ns
340
ns
320
ns
70
nC
20
nC
14
nC
0.91
1.2
V
ID -- VDS
100
Tc=25°C
90
2.0V
80
70
60
1.8V
50
40
30
20
10
VGS=1.5V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-to-Source Voltage, VDS -- V IT16418
150
VDS=10V
120
ID -- VGS
90
60
30
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V IT16419
No.8970-2/4