ATP216 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP216
RDS(on) -- VGS
60
50 _ID=5A
9A
40
18A
30
20
10
Tc=25°C
RDS(on) -- Tc
60
50
40
30
20
V GVVSG=GS1=.S82=V.45,V.5I,VDI,=DI5=DA9=A18A
10
0
0
1
2
3
4
5
6
Gate-to-Source Voltage, VGS -- V
100
| yfs | -- ID
7 ^VDS=10V
5
25^°C
7
8
IT16432
3
2
Tc=
--25^°C
75^°C
10
7
5
3
2
1.0
0.1
1000
7
5
3
2
100
7
5
3
2
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Drain Current, ID -- A
SW Time -- ID
IT16434
td(off)
VDD=30V
VGS=4.5V
tf
tr
td(on)
10
7
5
3
2
1.0
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10
Drain Current, ID -- A
5
VDS=30V
VGS -- Qg
ID=35A
4
23
5 7 ₁₀₀
IT16436
3
2
1
0
0
5
10
15
20
25
30
Total Gate Charge, Qg -- nC
IT16438
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
100
7
5
VGS=0V
3
2
Case Temperature, Tc -- °C
IS -- VSD
IT16433
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
10000
7
5
Diode Forward Voltage, VSD -- V IT16435
Ciss, Coss, Crss -- VDS
f=1MHz
3
Ciss
2
1000
7
5
3
2
100
7
5
3
2
Coss
Crss
10
0
10
20
30
40
50
Drain-to-Source Voltage, VDS -- V IT16437
ASO
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
IDP=105A (PW≤10μs)
ID=35A
Operation in
this area is
100ms
DC
100_μs10^μs
10m1sms
operation
1.0
7
limited by RDS(on).
5
3
2 ^Tc=25°C
0.1 ^{Single pulse}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Drain-to-Source Voltage, VDS -- V
5 7 ₁₀₀
IT16439
No.8985-3/4