ATP216 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Electrical Characteristics at Ta=25°C
ATP216
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=18A
ID=18A, VGS=4.5V
ID=9A, VGS=2.5V
ID=5A, VGS=1.8V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=4.5V, ID=35A
VDS=30V, VGS=4.5V, ID=35A
VDS=30V, VGS=4.5V, ID=35A
IS=35A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=30V
ID=18A
RL=1.67Ω
D
VOUT
ATP216
P.G
50Ω
S
Ratings
Unit
min
typ
max
50
V
1
μA
±10
μA
0.4
1.4
V
58
S
17
23 mΩ
20
28 mΩ
30
45 mΩ
2700
pF
150
pF
110
pF
27
ns
90
ns
220
ns
105
ns
30
nC
5.9
nC
7.9
nC
0.96
1.2
V
35
Tc=25°C
30
25
ID -- VDS
3.0V 2.5V
3.5V
20
2.0V
15
10
1.8V
5
VGS=1.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT16430
50
VDS=10V
45
ID -- VGS
40
35
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Source Voltage, VGS -- V IT16431
No.8985-2/4