ATP201 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP201
ID -- VDS
55
50
6.0V
Tc=25°C
Single pulse
45
40
35
4.5V
30
25
VGS=4.0V
20
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT14959
RDS(on) -- VGS
50
Tc=25°C
45
Single pulse
40
35
30
ID=9A
25
18A
20
15
10
5
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
5
VDS=10V
IT14961
3 Single pulse
2
25^°C
10
7
5
3
Tc=
--25^°C
75^°C
2
1.0
7
5
0.1
2 3 5 7 1.0
2 3 5 7 10
2
VDD=15V
1000 _VGS=10V
7
Drain Current, ID -- A
SW Time -- ID
5
3
2
23 5
IT14963
100
7
5
3
2
10
7
5
3
2
0.1
td(off)
tf
tr
td(on)
2 3 5 7 _1.0 2 3 5 7 ₁₀
Drain Current, ID -- A
2 3 57
IT14965
40
VDS=10V
35 ^{Single pulse}
ID -- VGS
30
25
20
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate-to-Source Voltage, VGS -- V IT14960
RDS(on) -- Tc
45
Single pulse
40
35
30
25
VGS=4.5V, ^ID=9A
20
15
VGS=10.0V, ^ID=18A
10
5
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT14962
100
7
5
VGS=0V
3 Single pulse
2
IS -- VSD
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Diode Forward Voltage, VSD -- V IT14964
Ciss, Coss, Crss -- VDS
3
f=1MHz
2
1000
7
5
3
2
100
7
5
3
0
Ciss
Coss
Crss
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT14966
No. A1547-3/4