ATP201 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP201
Continued from preceding page.
Parameter
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, ID=1mA
VDS=10V, ID=18A
ID=18A, VGS=10V
ID=9A, VGS=4.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=15V, VGS=10V, ID=35A
VDS=15V, VGS=10V, ID=35A
VDS=15V, VGS=10V, ID=35A
IS=35A, VGS=0V
Package Dimensions
unit : mm (typ)
7057-001
6.5
1.5
4.6
2.6
0.4
0.4
4
Ratings
Unit
min
typ
max
1.2
2.6
V
24
S
13
17 mΩ
23
33 mΩ
985
pF
180
pF
100
pF
10
ns
230
ns
51
ns
39
ns
17
nC
4.7
nC
2.8
nC
0.97
1.2
V
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=18A
RL=0.83Ω
D
VOUT
ATP201
P.G
50Ω
S
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
No. A1547-2/4