3LN04MH Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

3LN04MH
yfs -- ID
3
2
VDS=10V
1000
7
5
3
2
100
7
5
3
2
Ta= ^{--25°C75°C}
25^°C
10
1.0
3
2
100
7
5
2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀ 2 3 5 7 ₁₀₀₀
Drain Current, ID -- mA
IT11713
SW Time -- ID
VDS=15V
VGS=4V
td(off)
tf
3
tr
2
td(on)
10
7
10
23
5 7 ₁₀₀
23
Drain Current, ID -- mA
VGS -- Qg
4.0
VDS=10V
3.5 ^ID=350mA
5 7 ₁₀₀₀
IT11715
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Total Gate Charge, Qg -- nC
IT11717
PD -- Ta
0.7
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0
100
7
5
3
2
IS -- VSD
VGS=0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Diode Forward Voltage, VSD -- V IT11714
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
10
7
Coss
5
3
Crss
2
1.0
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT11716
ASO
3
2 _IDP=1.4A
≤10µs
1.0
7
5
3
2
0.1
7
5
ID=0.35A
Operation in this
area is limited by
RDS(oDnC)o.peration10(0Tma=1s205m_°^{1s1Cm0)0sµs}
3
2
Ta=25°C
Single pulse
0.01 ^{Mounted on a ceramic board (900mm2!0.8mm)}
0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
23 5
Drain-to-Source Voltage, VDS -- V IT11719
0.6
0.5
0.4
0.3
0.2
0.1
Mounted _{on a ceramic board (900mm 2!0.8mm)}
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11708
No. A0550-3/4