3LN04MH Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

3LN04MH
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
IS=350mA, VGS=0V
Ratings
Unit
min
typ
max
0.87
nC
0.39
nC
0.14
nC
0.86
1.2
V
Package Dimensions
unit : mm (typ)
7019A-003
2.0
0.15
3
0 to 0.02
1
2
0.65
0.3
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=200mA
RL=75Ω
D
VOUT
Rg
3LN04MH
P.G
50Ω
S
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Rg=1.2kΩ
ID -- VDS
350
2.0V
300
250
200
150
100
VGS=1.5V
50
0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V IT11709
RDS(on) -- VGS
4.0
Ta=25°C
3.5
3.0
ID=200mA
2.5
10mA
100mA
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V IT11711
ID -- VGS
200
VDS=10V
180
160
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V IT11710
RDS(on) -- Ta
3.0
2.5
2.0
ID=10mA, ^VGS=1.5V
1.5
1.0
ID=100mA, ^VGS=2.5V
0.5
ID=200mA, ^VGS=4.0V
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11712
No. A0550-2/4