3LN02M Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

3LN02M
RDS(on) -- ID
10
10
7
VGS=2.5V
5
7
3
5
2
Ta=75°C
1.0
7
--25°C
3
25°C
5
2
3
2
RDS(on) -- ID
VGS=1.5V
Ta=75°C
--25°C
25°C
0.1
0.01
3.0
23
5 7 0.1
23
Drain Current, ID – A
RDS(on) -- Ta
5 7 1.0
IT00228
2.5
2.0
1.5
1.0
IDID=8=01m50Am, ^{VA,GVSG=2S.=54V.0V}
0.5
1.0
0.001
10
7
5
3
2
23
5 7 _0.01
23
Drain Current, ID – A
yfs -- ID
5 7 _0.1
IT00229
VDS=10V
1.0
7
5
Ta=--25^°C
75^°C
3
25^°C
2
0
--60 --40 --20 0 20 40 60 80 100 120 140
Ambient Temperature, Ta – ˚C _IT00230
1.0
IF -- VSD
VGS=0
7
5
3
2
0.1
7
5
3
2
0.1
0.01
1000
7
5
3
2
100
7
5
3
2
23
5 7 _0.1
23
Drain Current, ID – A
SW Time -- ID
5 7 _1.0
IT00231
VDD=15V
VGS=4V
td(off)
tf
tr
td(on)
0.01
0
100
7
5
3
2
10
7
5
3
2
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Diode Forward Voltage, VSD – V _IT00232
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
5
10
15
20
25
30
Drain-to-Source Voltage, VDS – V _IT00234
10
0.01
23
10
VDS=10V
9 _ID=300mA
5 7 _0.1
23
Drain Current, ID – A
VGS -- Qg
8
5 7 _1.0
IT00233
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
Total Gate Charge, Qg – nC
IT00235
No.6128-3/4