3LN02M Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

3LN02M
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Switching Time Test Circuit
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
IS=300mA, VGS=0
4V ^VIN
0V
VIN
PW=10µs
D.C.≤1%
VDD=15V
ID=150mA
RL=100Ω
D
VOUT
G
3LN02M
P.G
50Ω
S
Ratings
Unit
min typ max
30
pF
15
pF
10
pF
32
ns
110
ns
250
ns
160
ns
2.34
nC
0.38
nC
0.45
nC
0.8
1.2 V
0.30
3.5V
4.0V
0.25
ID -- VDS
3.0V
0.20
0.15
0.10
VGS=1.5V
0.05
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS – V _IT00224
RDS(on) -- VGS
3.0
Ta=25°C
2.5
2.0
1.5
ID=150mA
80mA
1.0
0.5
0
0
1
234
5
67
8
9 10
Gate-to-Source Voltage, V_GS – V _IT00226
0.6
VDS=10V
0.5
ID -- VGS
0.4
0.3
0.2
0.1
0
0
10
7
5
3
2
1.0
7
5
3
2
0.1
0.01
0.5
1.0
1.5
2.0
Gate-to-Source Voltage, VGS – V
RDS(on) -- ID
2.5
IT00225
VGS=4V
25°C
Ta=75°C
--25°C
23
5 7 _0.1
23
Drain Current, ID – A
5 7 _1.0
IT00227
No.6128-2/4