3HN04CH Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

3HN04CH
7
VDS=10V
5
3
2
100
7
5
3
2
⏐yfs⏐ -- ID
Ta= ^{--25°C75°C 25°C}
10
0.001
3
2
23
5 7 _0.01 2 3 5 7 _0.1
Drain Current, ID -- A
SW Time -- ID
2 3 5 7 _1.0
IT10825
VDD=15V
VGS=10V
100
td(off)
7
5
tf
3
2
td(on)
10
tr
7
5
0.01
23
10
VDS=10V
9 ID=300mA
5 7 _0.1
23
Drain Current, ID -- A
VGS -- Qg
8
5 7 _1.0
IT10827
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Total Gate Charge, Qg -- nC
IT10829
PD -- Ta
0.8
When mounted on ceramic substrate
(900mm²âœ•0.8mm)
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.2
5
3
2
IS -- VSD
VGS=0V
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT10826
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
10
Coss
7
5
Crss
3
2
0
2
4
6
8
10
Drain-to-Source Voltage, VDS -- V IT10828
ASO
3
2
IDP=1.2A
PW≤10μs
1.0
7
5
3
2
0.1
7
5
ID=0.3A
Operation in this
area is limited by
DC
RDS(on).
10m1sm1s00^μs
operat1io0n0m(Tsa=25_°C)
3
2 ^Ta=25°C
Single pulse
0.01 ^{When mounted on ceramic substrate (900mm2✕0.8mm)}
0.1
2 3 5 7 _1.0 2 3 5 7 ₁₀
23 5
Drain-to-Source Voltage, VDS -- V IT13182
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13183
No. A1013-3/4