3HN04CH Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
1
0.95
2
0.4
3HN04CH
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
IS=300mA, VGS=0V
Ratings
Unit
min
typ
max
14
ns
17.5
ns
65
ns
41
ns
1.68
nC
0.54
nC
0.12
nC
0.86
1.2
V
Switching Time Test Circuit
VIN
10V
0V
VDD=15V
0.15
VIN
ID=300mA
RL=50Ω
PW=10μs
D
VOUT
0.05
D.C.≤1%
G
Rg
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
3HN04CH
P.G
50Ω
S
Rg=1.2kΩ
ID -- VDS
0.30
0.25
0.20
0.15
VGS=3V
0.10
0.05
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT10821
RDS(on) -- VGS
3.0
Ta=25°C
2.5
150mA
ID=80mA
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V IT10823
0.30
VDS=10V
0.25
ID -- VGS
0.20
0.15
0.10
0.05
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source Voltage, VGS -- V IT10822
RDS(on) -- Ta
3.0
2.5
2.0
1.5
VGS=4V, ^ID=80mA
1.0
VGS=10V, ^ID=150mA
0.5
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10824
No. A1013-2/4