2SC6095 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

2SC6095
IC -- VCE
2.0
2.5
40mA
1.6
20mA
2.0
IC -- VBE
VCE=5V
1.2
0.8
0.4
0
0
1000
7
5
3
2
10mA
5mA
2mA
1mA
IB=0mA
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, VCE -- V IT11070
hFE -- IC
Ta=75°_C
VCE=5V
25°C
--25°C
100
7
5
3
0.01
100
7
5
23
5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
Cob -- VCB
23 5
IT11072
f=1MHz
3
2
10
7
5
3
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100
Collector-to-Base Voltage, VCB -- V IT11074
VCE(sat) -- IC
5
IC / IB=20
3
2
0.1
7
5
3
2
0.01
7
0.01
23
Ta=75^°C--25_°C
25^°C
5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
23 5
IT11076
1.5
1.0
0.5
0
0
1000
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT11071
f _T -- IC
VCE=10V
100
7
5
3
2
10
0.01
5
3
2
2 3 5 7 _0.1
2 3 5 7 _1.0
23
Collector Current, IC -- A
VCE(sat) -- IC
IT11073
IC / IB=10
0.1
7
5
3
2
0.01
7
5
3
0.01
3
2
Ta=75^°C--25_°C
25^°C
23
5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
VBE(sat) -- IC
23 5
IT11075
IC / IB=10
1.0
Ta= ^--25°C
7
75^°C
5
25°^C
3
2
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5}
Collector Current, IC -- A
IT11077
No. A0411-3/4