2SC6095 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Package Dimensions
unit : mm
7007A-004
Top View
4.5
1.6
1
2
3
0.4
0.5
1.5
3.0
2SC6095
Symbol
Conditions
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
120
120
80
6.5
Ratings
typ
350
14
100
90
0.9
40
920
32
max
150
135
1.2
Unit
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
OUTPUT
1.5
INPUT _VR10
RB
RL
50Ω
+
+
100µF
470µF
VBE= --5V
VCC=40V
0.4
10IB1= --10IB2=IC=0.5A
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
No. A0411-2/4