1HN04CH Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

1HN04CH
1000
7 ^VDS=10V
5
3
2
⏐yfs⏐ -- ID
100
7
5
3
2
Ta= ^--25°_7C5^°C ₂₅^°C
10
7
5
3
2
1.0
0.1
7
5
3
2
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Drain Current, ID -- mA
SW Time -- ID
IT12903
VDD=50V
VGS=10V
1000
7
5
tf
3
2
td(off)
100
7
5
3
2
td(on)
10
tr
7
5
3
1.0
23
5 7 ₁₀
23
10
VDS=50V
9 ID=120mA
Drain Current, ID -- mA
VGS -- Qg
5 7 ₁₀₀
IT12905
8
7
6
5
4
3
2
1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT12907
PD -- Ta
0.7
1000
7
5
VGS=0V
3
2
IS -- VSD
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT12904
Ciss, Coss, Crss -- VDS
5
f=1MHz
3
2
Ciss
10
7
5
3
2
Coss
1.0
Crss
7
5
3
0 10 20 30 40 50 60 70 80 90 100
Drain-to-Source Voltage, VDS -- V IT12906
ASO
1.0
7
5
IDP=480mA
PW≤10µs
3
2
0.1
7
5
3
2
ID=120mA
Operation
in
this
aDreCaoperatio1n001(Tm0ams=s215m^°Cs ₎
0.01
is limited by RDS(on).
7
100µs
5
3 _Ta=25°C
2 _{Single pulse}
0.001 ^{Mounted on a ceramic board (900mm2✕0.8mm)}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ^{2 3}
Drain-to-Source Voltage, VDS -- V IT12908
0.6
0.5
0.4
0.3
0.2
0.1
Mounted _{on a ceramic board (900mm 2✕0.8mm)}
00
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12909
No. A0925-3/4