1HN04CH Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
1
0.95
2
0.4
1HN04CH
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=50V, VGS=10V, ID=120mA
VDS=50V, VGS=10V, ID=120mA
VDS=50V, VGS=10V, ID=120mA
IS=120mA, VGS=0V
Ratings
Unit
min
typ
max
13
ns
7.8
ns
87
ns
60
ns
1.6
nC
0.25
nC
0.25
nC
0.83
1.2
V
Switching Time Test Circuit
0.15
0.05
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=50V
ID=60mA
RL=833Ω
D
VOUT
Rg
1HN04CH
P.G
50Ω
S
Rg=1.2kΩ
ID -- VDS
120
4.0V
100
80
60
3.0V
40
20
VGS=2.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT12899
RDS(on) -- VGS
16
Ta=25°C
14
12
10
ID=30mA _60mA
8
6
4
2
0
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V IT12901
250
VDS=10V
200
ID -- VGS
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-to-Source Voltage, VGS -- V IT12900
RDS(on) -- Ta
16
14
12
10
8
6
V ^{GVS=G4SV=,1I0DV=,3I0Dm=A60mA}
4
2
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12902
No. A0925-2/4