LC87F2W48A Datasheet, PDF (21/26 Pages) Sanyo Semicon Device – 50K-byte FROM and 1536-byte RAM integrated 8-bit 1-chip Microcontroller

LC87F2W48A
Continued from preceding page
Parameter
HALT mode
consumption
current
(Note 7-1)
Symbol
IDDHALT(7)
Pin/
remarks
VDD1
= VDD2
= VDD3
Conditions
HALT mode
• External FmCF oscillation stopped.
• FsX’tal=32.768kHz crystal oscillation mode
• System clock set to 8MHz with Frequency
variable RC oscillation
Specification
VDD[V]
min.
typ.
max. unit
2.7 to 5.5
1.5
2.4
mA
• Internal Low speed and Medium speed RC
oscillation stopped.
2.7 to 3.6
1
1.6
• 1/1 frequency division ratio
IDDHALT(8)
HALT mode
• External FsX’tal and FmCF oscillation stopped.
• System clock set to internal Low speed RC
2.7 to 5.5
18
74
oscillation.
• Internal Medium speed RC oscillation stopped.
• Frequency variable RC oscillation stopped.
2.7 to 3.6
9
40
• 1/1 frequency division ratio
IDDHALT(9)
HALT mode
μA
• External FmCF oscillation stopped.
• FsX’tal=32.768kHz crystal oscillation mode
2.7 to 5.5
27
95
• System clock set to 32.768 kHz side
• Internal Low speed and Medium speed RC
oscillation stopped.
• Frequency variable RC oscillation stopped.
2.7 to 3.6
5.5
42
• 1/2 frequency division ratio
HOLD mode
consumption
current
(Note 7-1)
IDDHOLD(1)
VDD1
= VDD2
= VDD3
HOLD mode
• CF1=VDD or open
(External clock mode)
2.7 to 5.5
2.7 to 3.6
0.04
20
0.03
10
Timer HOLD
mode
IDDHOLD(2)
Timer HOLD mode
• CF1=VDD or open (External clock mode)
2.7 to 5.5
μA
25
88
consumption
• FsX’tal=32.768kHz crystal oscillation mode
current
(Note 7-1)
2.7 to 3.6
4.5
38
Note 7-1: Values of the consumption current do not include current that flows into the output transistors and internal
pull-up resistors.
F-ROM Programming Characteristics at Ta = +10°C to +55°C, VSS1 = VSS2 = VSS3 = 0V
Parameter
Onboard
programming
current
Programming
time
Symbol
IDDFW
tFW(1)
tFW(2)
Pin/Remarks
Conditions
VDD1
= VDD2
= VDD3
Only current of the Flash block.
Erasing time
Programming time
VDD[V]
min
2.7 to 5.5
2.7 to 5.5
Specification
typ
max
unit
5
10 mA
20
30 ms
40
60
μs
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