TIG058E8 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – Light-Controlling Flash Applications

TIG058E8
Continued from preceding page.
Parameter
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
VGE(off)
VCE(sat)
Cies
Coes
Cres
Conditions
VCE=10V, IC=1mA
IC=100A, VGE=4V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
Ratings
Unit
min
typ
max
0.4
0.9
V
4.0
5.6
V
2200
pF
32
pF
24
pF
Package Dimensions
unit : mm (typ)
7011A-004
Top View
2.9
8
5
0.15
0 t o 0.02
1
4
0.65
0.3
Electrical Connection
8
7
6
5
1
2
3
4
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Top view
Bot t om View
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
Fig.1 Large Current R Load Screening Circuit
RL
RG
CM +
TIG058E8
4V
0V
100kΩ
VCC
Note1. Gate Series Resistance RG ≥ 230Ω is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 230Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
No. A1381-2/5