FX855 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

FX855
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter
[MOSFET]
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±12V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1mA, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=2A, VGS=0
VR
VF
IR
C
trr
Rthj-a
IR=300µA
IF=500mA
VR=45V
VR=10V, f=1MHz Cycle
IF=IR=100mA, See specified Test CIrcuit
Mounted on ceramic board (750mm²Ã—0.8mm)
Ratings
Unit
min
typ
max
60
V
100 µA
±10 µA
1.0
2.0 V
1.2
2.0
S
0.35 0.45 Ω
0.45
0.6 Ω
150
pF
60
pF
12
pF
6
ns
10
ns
60
ns
20
ns
1.0
V
90
V
0.7 V
80 µA
34
pF
10 ns
85
˚C/W
Switching Time Test CIrcuit [MOSFET] _{Trr Test Circuit [SBD]}
No.4895-2/4