FX855 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN4895
FX855
MOSFET:N-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type composed of a ow ON-resistance N-
channel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates high-
density mounting.
· The FX855 is formed with 2 chips, one being
equivalent to the 2SK1470 and the other the SB05-
09, placed in one package.
Package Dimensions
unit:mm
2119
[FX855]
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
Specifications
(Top view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25˚C
Mounted on ceramic board (750mm²Ã—0.8mm)
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
· Marking:855
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
Ratings
Unit
60 V
±15 V
2A
8A
6W
1.5 W
150 ˚C
–55 to +150 ˚C
90 V
95 V
500 mA
10 A
–55 to +125 ˚C
–55 to +125 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095TS (KOTO) TA-0115 No.4895-1/4