FX802 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC-DC Converter

FX802
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD] (Value per element)
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=–20V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–500mA
VCE=–2V, IC=–4A
VCE=–5V, IC=–200mA
VCE=–10V, f=1MHz
IC=–3A, IB=–60mA
IC=–3A, IB=–60mA
IC=–10µA, IE=0
IE=–1mA, RBE=∞
IE=–10µA, IC=0
See sepcified Test Circuit
See sepcified Test Circuit
See sepcified Test Circuit
VR
VF
IR
C
trr
Rthj-a
IR=500µA
IF=2A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
Mounted on ceramic board (750mm²Ã—0.8mm)
Switching Time Test Circuit
Trr Test Circuit
Ratings
Unit
min
typ
max
–500 nA
–500 nA
140
400
60
320
MHz
60
pF
–250 –500 mV
–1.0 –1.3 V
–25
V
–20
V
–5
V
40
ns
200
ns
10
ns
30
V
0.55 V
100 µA
70
pF
20 ns
85
˚C/W
No.5052-2/4