FX802 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter

Ordering number:EN5052
FX802
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode (Twin type · Cathode Common)
DC-DC Converter
Features
· Complex type of a low saturation voltage, high
speed switching and large current PNP transistor and
a fast recovery and low forward voltage Schottky
barrier diode facilitating high-sensity mounting.
· The FX802 is composed of 2 chips, one being
equivalent to the 2SB1302 and the other the
SB20W03P, placed in one packae.
Package Dimensions
unit:mm
2126
[FX802]
Electrical Connection
1:Base
2:Emitter
3:Anode1
4:Anode2
5:Cathode
6:Collector
Specifications
(Top view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
· Marking:802
Symbol
Conditions
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Mounted on ceramic board (750mm²Ã—0.8mm) 1 unit
VRRM
VRSM
IO
IO
IFSM
Tj
Tstg
(Total)
50Hz sine wave, 1 cycle
1:Base
2:Emitter
3:Anode1
4:Anode2
5:Cathode
6:Collector
SANYO:XP6
(Bottom view)
Ratings
Unit
–25 V
–20 V
–5 V
–5 A
–8 A
–1 A
1.5 W
150 ˚C
30 V
35 V
2A
4A
10 A
–55 to +125 ˚C
–55 to +125 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41095TS (KOTO) TA-0134 No.5052-1/4