FX602 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX602
Parameter
D-S Breakdown Voltage
G-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=20V, VGS=0
VGS=±12, VDS=0
VGS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
IS=2A, VGS=0
Ratings
Unit
min
typ max
20
V
±15
V
100 µA
±10 µA
0.8
2.0 V
1.2
2
S
130 180 mΩ
170 250 mΩ
170
pF
145
pF
50
pF
10
ns
12
ns
50
ns
35
ns
1.0
V
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