FX602 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number:EN4885
FX602
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
· Composite type composed of two low ON-resistance
N-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX602 is formed with two chips, each being
equivalent to the 2SK2152, placed in one package.
· Matched pair characteristics.
Package Dimensions
unit:mm
2120
[FX602]
Switching Time Test CIrcuit
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
(Top view)
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
PT
Tch
Tstg
· Marking:602
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C, 1unit
Mounted on ceramic board (750mm²Ã—0.8mm) 1unit
Mounted on ceramic board (750mm²Ã—0.8mm)
Ratings
Unit
20 V
±15 V
2A
8A
6W
1.5 W
2W
150 ˚C
–55 to +150 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO (KOTO) TA-0108 No.4885-1/4