FP303 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

FP303
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking:303
Symbol
Conditons
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=50V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
VCE=10V, IC=50mA
VCE=10V, f=1MHz
IC=1.0A, IB=50mA
IC=1.0A, IB=50mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VR
VF
IR
C
trr
Rthj-a
IR=200µA
IF=500mA
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See sepcified Test Circuit.
Mounted on ceramic board (250mm²Ã—0.8mm)
Ratings
Unit
min
typ
max
140
40
150
12
0.15
0.9
60
50
6
60
550
30
0.1 µA
0.1 µA
560
MHz
pF
0.4 V
1.2 V
V
V
V
ns
ns
ns
50
V
0.55 V
50 µA
22
pF
10 ns
170
˚C/W
No.4657-2/4