FP303 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN4657
FP303
TR:NPN Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with NPN transistor and Schottoky
barrier diode facilitates high-density mounting.
· The FP303 is composed of chips equivalent to the
2SD1623 and SB05-05CP, which are placed in one
package.
Package Dimensions
unit:mm
2099A
[FP303]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Mounted on ceramic board (250mm²Ã—0.8mm)
50Hz sine wave, 1 cycle
Electrical Connection
1:Base
2:Collector
3:Emitter Common
4:Cathode
5:Anode
6:Cathode
7:Collector
(Top View)
1:Base
2:Collector
3:Emitter
4:Cathode
5:Anode
6:Cathode
7:Collector
SANYO:PCP5
(Bottom view)
Ratings
Unit
60 V
50 V
6V
2A
4A
400 mA
0.8 W
150 ˚C
–55 to +150 ˚C
50 V
55 V
500 mA
5A
–55 to +125 ˚C
–55 to +125 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/N2394TS (KOTO) B8-0025 No.4657-1/4