FP104 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

FP104
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
.Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditons
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
VCB=–40V, IE=0
VEB=–3V, IC=0
VCE=–2V, IC=–100mA
VCE=–2V, IC=–1.5A
VCE=–2V, IC=–100mA
VCE=–10V, f=1MHz
IC=–800mA, IB=–40mA
IC=–800mA, IB=–40mA
IC=–10µA, IE=0
IC=–1mA, RBE=∞
IC=–10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf
See specified Test Circuit
VR
VF
IR
C
trr
Rthj-a
IR=200µA
IF=500mA
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
Mounted on ceramic board (250mm²Ã—0.8mm)
Switching Time Test Circuit
(TR)
(SBD)
Ratings
Unit
min
typ
max
–1.0 µA
–1.0 µA
100
280
25
300
MHz
18
pF
–0.3 –0.8 V
–0.9 –1.3 V
–50
V
–40
V
–5
V
50
ns
120
ns
150
ns
50
V
0.55 V
50 µA
22
pF
10 ns
120
˚C/W
No.4655-2/4