FP104 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN4655
FP104
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with 2devices (PNP transistor and
Shottky barrier diode) contained in one package,
facilitating high-density mounting.
· The FP104 is formed with a chips, one being
equivalent to the 2SA1729 and a chip being
eqivalent to the SB05-05CP placed in one package.
Package Dimensions
unit:mm
2088A
[FP104]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking:202
Electrical Connection
Symbol
Conditions
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on ceramic board (250mm²Ã—0.8mm)
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
1:Base
2,4,6,7:Common
(Collcector, Cathode)
3:Emitter
5:Anode
(Top view)
1:Base
2,4,6,7:Common
(Collcector, Cathode)
3:Emitter
5:Anode
SANYO:PCP4
(Bottom view)
Ratings
Unit
–50 V
–40 V
–5 V
–1.5 A
–3 A
–300 mA
1.3 W
150 ˚C
–55 to +150 ˚C
50 V
55 V
500 mA
5A
–55 to +125 ˚C
–55 to +125 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/53094TH (KOTO) A8-9345 No.4655-1/4