FH102 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – High-Frequency Low-Noise Amp, Differential Amp Applications

FH102
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min typ max
Forward Transfer Gain
S2le²(1)
VCE=5V, IC=20mA, f=1GHz
9
12
dB
S2le²(2)
VCE=5V, IC=3mA, f=1GHz
8
dB
Noise Figure
NF
VCE=5V, IC=7mA, f=1GHz
1.0 1.8 dB
Note) The specifications shown above are for each individual transistor except the hFE (small/large) and VBE
(small-large) for which pair capability is also shown.
Marking : 102
Electrical Connection
B1
B2
E2
C1
E1
C2
3
hFE – I C
VCE=5V
2
100
7
5
3
2
10
7
5
3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀ 2
Collector Current,IC – mA
3
C ob – VCB
f=1MHz
2
1.0
7
5
3
2
0.1
7
5
7 _0.1
2 3 5 7 _1.0 2 3 5 7 ₁₀
Collector-to-Base Voltage, VCB – V
23
2
f_T – IC
VCE=5V
10
7
5
3
2
1.0
7
5
7 _1.0
3
2
2 3 5 7 ₁₀
2 3 5 7 ₁₀₀
2
Collector Current,IC – mA
C re – VCB
f=1MHz
1.0
7
5
3
2
0.1
7
57 _0.1
2 3 5 7 _1.0 2 3 5 7 ₁₀
Collector-to-Base Voltage, VCB – V
23
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