FH102 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – High-Frequency Low-Noise Amp, Differential Amp Applications

Ordering number : EN5874
NPN Epitaxial Planar Silicon Composite Transistor
FH102
High-Frequency Low-Noise Amp,
Differential Amp Applications
Features
Package Dimensions
• Composite type with 2 transistors contained in the MCP _{unit: mm}
package currently in use, improving the mounting
efficiency greatly.
2149-MCP6
• The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.
• Optimal for differential amplification due to excellent
[FH102]
0.25
0.15
654
thermal equilibrium and pair capability.
0 ‘0.1
123
0.65
2.0
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
VCBO
VCEO
VEBO
IC
PC
Mounted on ceramic board
(250mm²Ã—0.8mm), 1unit
Total Dissipation
PT
Mounted on ceramic board
(250mm²Ã—0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
Ratings
Unit
20
V
10
V
2
V
70 mA
300 mW
500 mW
150
°C
–55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage
Difference
ICBO
VCB=10V, IE=0
IEBO
VEB=1V, IC=0
hFE
VCE=5V, IC=20mA
hFE(small/large) VCE=5V, IC=20mA
VBE(small-large) VCE=5V, IC=20mA
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Reverse Transfer Capacitance Cre
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Ratings
Unit
min typ max
1.0 µA
10 µA
90
200
0.7 0.95
1.0
mV
5
7
GHz
0.75 1.2 pF
0.5
pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1130 No.5874-1/5