CPH5871_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH5871
Electrical Characteristics at Ta=25°C
Parameter
Symbol
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=4.5V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=4.5V, ID=3.5A
IS=3.5A, VGS=0V
IR=0.5mA
IF=0.7A
IF=1A
VR=16V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
min
typ
max
30
V
1
μA
±10
μA
0.4
1.3
V
2.0
3.4
S
40
52 mΩ
53
74 mΩ
82
132 mΩ
430
pF
59
pF
38
pF
10
ns
41
ns
36
ns
37
ns
4.7
nC
0.8
nC
1.1
nC
0.8
1.2
V
30
V
0.45
0.5
V
0.48
0.53
V
15
μA
27
pF
10
ns
Switching Time Test Circuit
(MOSFET)
VIN
4.5V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=2A
RL=7.5Ω
D
VOUT
P.G
50Ω
CPH5871
S
trr Test Circuit
(SBD)
Duty≤10%
50Ω
100Ω
10Ω
10μs
--5V
trr
Ordering Information
Device
CPH5871-TL-H
Package
CPH5
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1401-2/7