CPH5871_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1401A
CPH5871
SANYO Semiconductors
DATA SHEET
CPH5871
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Features
Applications
• _{Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package}
facilitating high-density mounting
• _{Halogen free compliance}
• _{Protection diode in}
• _[MOSFET] • _{Ultrahigh-speed switching}
• _{1.8V drive}
• _[SBD]
• _{Short reverse recovery time}
• _{Low forward voltage}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
V_RSM
I_O
I_FSM
Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (600mm²Ã—0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
30
V
±12
V
3.5
A
14
A
0.9
W
150
°C
--55 to +125
°C
30
V
35
V
1
A
10
A
--55 to +125
°C
--55 to +125
°C
Package Dimensions
unit : mm (typ)
7017A-005
2.9
5 43
0.15 ^CPH5871-TL-H
Product & Package Information
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
0.95
2
0.4
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
TL
Electrical Connection ₅
4
3
1
2
http://semicon.sanyo.com/en/network
61312 TKIM/12809PE MSIM TC-00001794 No. A1401-1/7