CPH5846 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5846
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--800mA
ID=--800mA, VGS=--4V
ID=--400mA, VGS=--2.5V
ID=--70mA, VGS=--1.8V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
IS=--1.5A, VGS=0V
IR=0.5mA
IF=0.3A
IF=0.5A
VR=6V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
min
typ
max
--20
--0.4
1.3
2.3
180
240
350
290
40
25
10
35
32
27
3.2
0.8
0.6
--0.87
V
--1 µA
±10 µA
--1.3
V
S
235 mΩ
340 mΩ
600 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2
V
15
V
0.31
0.34
V
0.34
0.37
V
90 µA
20
pF
10 ns
Package Dimensions
unit : mm (typ)
7017A-005
2.9
5 43
1
0.95
2
0.4
0.15
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5
4
3
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
1
2
Top view
No.8688-2/6