CPH5835_07 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5835
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
Rth(j-a)
ID= --1mA, VGS=0
VDS= --20V, VGS=0
VGS=±8V, VDS=0
VDS= --10V, ID= --1mA
VDS= --10V, ID= --800mA
ID= --800mA, VGS= --4V
ID= --400mA, VGS= --2.5V
ID= --70mA, VGS= --1.8V
VDS= --10V, f=1MHz
VDS= --10V, f=1MHz
VDS= --10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS= --10V, VGS= --4V, ID= --1.5A
VDS= --10V, VGS= --4V, ID= --1.5A
VDS= --10V, VGS= --4V, ID= --1.5A
IS= --1.5A, VGS=0
IR=1.5mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm²!0.8mm)
Ratings
Unit
min
typ
max
--20
--0.4
1.3
2.3
180
240
350
290
40
25
10
35
32
27
3.2
0.8
0.6
--0.87
V
--1 µA
±10 µA
--1.3
V
S
235 mΩ
340 mΩ
600 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5
V
15
V
0.27
0.32
V
0.30
0.35
V
600 µA
65
pF
15 ns
138
°C / W
Package Dimensions
unit : mm
2171
2.9
543
0.15
0.05
1
0.95
2
0.4
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5
4
3
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
1
2
Top view
No.8207-2/6