CPH5605 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
CPH5605
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
IS=1.4A, VGS=0
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=–1mA, VGS=0
VDS=–20V, VGS=0
VGS=±8V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–500mA
ID=–500mA, VGS=–4V
ID=–300mA, VGS=–2.5V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–1.0A
VDS=–10V, VGS=–10V, ID=–1.0A
VDS=–10V, VGS=–10V, ID=–1.0A
IS=–1.0A, VGS=0
Electrical Connection
G1
S
G2
Ratings
Unit
min
typ
max
90
pF
60
pF
28
pF
10
ns
20
ns
20
ns
20
ns
6
nC
1
nC
2
nC
0.9
1.2 V
–20
V
–10 µA
±10 µA
–0.4
–1.4 V
1.0
1.4
S
420 550 mΩ
630 890 mΩ
100
pF
60
pF
25
pF
10
ns
25
ns
27
ns
32
ns
5
nC
1
nC
1
nC
–0.9 –1.5 V
D1 D2
(Top view)
Switching Time Test Circuit
[N-channel]
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=700mA
RL=14.3Ω
D
VOUT
P.G
50Ω
S
Switching Time Test Circuit
[P-channel]
VIN
0V
--4V
VIN
PW=10µs
D.C.≤1%
G
VDD=--10V
ID=--500mA
RL=20Ω
D
VOUT
P.G
50Ω
S
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