CPH5605 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number:ENN6441
N-Channel and P-Channel Silicon MOSFETs
CPH5605
Ultrahigh-Speed Switching Applications
Features
· The CPH5605 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON
resistance and high-speed switching, thereby en-
abling high-density mounting.
· 2.5V drive.
Package Dimensions
unit:mm
2168
[CPH5605]
2.9
0.15
543
0.05
1
0.95
2
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
0.4
SANYO : CPH5
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
Ratings
Unit
N-channel P-channel
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm²Ã—0.8mm) 1unit
20
–20 V
±10
±10 V
1.4
–1 A
5.6
–4 A
0.9 W
150 _˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FE
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=700mA
ID=700mA, VGS=4V
ID=400mA, VGS=2.5V
Ratings
Unit
min typ max
20
V
10 µA
±10 µA
0.4
1.3 V
1.8
2.5
S
200 260 mΩ
260 360 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2490 No.6441-1/6