CPH3910 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Junctin Silicon FET High-Frequency Low-Noise Amplifi er Applications

Electrical Characteristics at Ta=25°C
CPH3910
Parameter
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Symbol
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
NF
Conditions
IG=--10μA, VDS=0V
VGS=--10V, VDS=0V
VDS=5V, ID=100μA
VDS=5V, VGS=0V
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, VGS=0V, f=100MHz
Ratings
Unit
min
typ
max
--25
V
--1.0 nA
--0.6
--1.2
--1.8
V
20
40 mA
30
40
mS
6.0
pF
2.3
pF
2.1
2.8
dB
ID -- VDS
30
25
VGS=0V
20
--0.2V
15
10
5
0
0
0.5
1.0
1.5
Drain-to-Source Voltage, VDS -- V
50
ID -- VGS
VDS=5V
45
--0.4V
--0.6V
--0.8V
--1.0V
2.0
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40
35
30
25
20
15
10
5
0
--2.0
--1.5
--1.0
--0.5
0
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
100
7
VDS=5V
f=1kHz
5 _IDSS=30mA
3
2
0.5
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10
7
5
3
2
1.0
1.0
23
5 7 ₁₀
23
Drain Current, ID -- mA
5 7 ₁₀₀
IT16691
ID -- VDS
40
35
VGS=0V
30
25
--0.2V
20
--0.4V
15
10
5
0
0
2
4
6
8
Drain-to-Source Voltage, VDS -- V
50
VDS=5V
ID -- VGS
45
--0.6V
--0.8V
--1.0V
10
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40
35
30
25
20
15
10
5
0
--2.0
100
7
--1.5
--1.0
--0.5
0
0.5
Gate-to-Source Voltage, VGS -- V
| yfs | -- IDSS
IT16690
VDS=5V
VGS=0V
f=1kHz
5
3
2
10
10
2
3
5
7
100
Drain Current, IDSS -- mA
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No. A1965-2/4