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CPH3910 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Junctin Silicon FET High-Frequency Low-Noise Amplifi er Applications
Ordering number : ENA1965
CPH3910
SANYO Semiconductors
DATA SHEET
CPH3910
N-Channel Junctin Silicon FET
High-Frequency Low-Noise
Amplifier Applications
Applications
• For AM tuner RF amplification
• Low noise amplifier
Features
• VGDS: --25V max.
• | yfs |: 40mS typ.
• Ciss: 6.0pF typ.
• NF: 2.1dB typ.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
25
V
--25
V
10 mA
50 mA
400 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7015A-007
2.9
0.15
3
0.05
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
1
0.95
2
0.4
1 : Source
2 : Drain
3 : Gate
SANYO : CPH3
TL
Electrical Connection
3
12
http://semicon.sanyo.com/en/network
21512AC TKIM TC-00002694 No. A1965-1/4