CPH3248 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

CPH3248
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
Unit
min
typ
max
90
150 mV
0.85
1.2
V
120
V
120
V
100
V
6.5
V
40
ns
1100
ns
40
ns
Package Dimensions
unit : mm
7015A-003
2.9
3
1
0.95
2
0.4
0.15
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT ^VR10
RB
50Ω
+
100µF
VBE= --5V
10IB1= --10IB2=IC=0.5A
OUTPUT
RL
+
470µF
VCC=50V
IC -- VCE
2.0
80mA
60mA
1.6
40mA
1.2
20mA
10mA
0.8
5mA
2mA
0.4
0
IB=0mA
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, VCE -- V IT11013
2.0
VCE=5V
1.8
IC -- VBE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT11014
No. A0401-2/4