CPH3248 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Ordering number : ENA0401
CPH3248
SANYO Semiconductors
DATA SHEET
CPH3248
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
• _{DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.}
Features
• _{Adoption of FBET, MBIT processes.}
• _{Large current capacitance.}
• _{Low collector-to-emitter saturation voltage.}
• High-speed switching.
• Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm).
• High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Mounted on a ceramic board (600mm²!0.8mm)
Ratings
Unit
120
V
120
V
100
V
6.5
V
2
A
3
A
400
mA
0.9
W
150
°C
--55 to +150
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : DT
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=80V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=300mA
VCB=10V, f=1MHz
min
300
Ratings
Unit
typ
max
1 µA
1 µA
600
300
MHz
13
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 60506EA MS IM TB-00002344 No. A0401-1/4