ATP405 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP405
Continued from preceding page.
Parameter
Symbol
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, ID=20A
ID=20A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=60V, VGS=10V, ID=40A
VDS=60V, VGS=10V, ID=40A
VDS=60V, VGS=10V, ID=40A
IS=40A, VGS=0V
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
4.6
2.6
0.4
Ratings
Unit
min
typ
max
62
S
25
33 mΩ
4000
pF
300
pF
170
pF
38
ns
125
ns
220
ns
150
ns
68
nC
14
nC
15
nC
0.9
1.2
V
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=60V
ID=20A
RL=3Ω
D
VOUT
ATP405
P.G
50Ω
S
Avalanche Resistance Test Circuit
L
≥50Ω
10V
0V
50Ω
ATP405
VDD
No. A1458-2/4